SOT-343 11 страница

SOT23, SOD23 (продолжение)

Код	Типономинал	Фирма	Функ ция	Особенности	Цоколевка
F5	KST1009F5	SAMS	NPN	VCB0=50B;IC=50MA; PD=350мВт; h21=135...270; fT>150МГц	B	E	C
F8p	BF828	PHIL	PNP	VCB0=-30B;IC=-25MA; PD=250мВт; fT=450	B	E	C
FA	HSMP-4820	HP	PIN	IF<1A; PD<250мВт; VBR>50B; RS<0.6Ом; CD<1.0пФ; LT=1.0нГ	A	A	K
FDp	BCV26	PHIL	PNP	VCB0=-40B;IC=-300MA; PD=250мВт; h21>20000; fT=220МГц	B	E	C
FDs	BCV26	SIEM	PNP	VCB0=-40B;IC=-500MA; PD=360мВт; h21>10000; fT=200МГц	B	E	C
Fep	BCV46	PHIL	PNP	VCB0=-80B;IC=-500MA; PD=250мВт; h21>4000; fT=220МГц	B	E	C
FEs	BCV46	SIEM	PNP	VCB0=-80B;IC=-500MA; PD=360мВт; h21>4000; fT=200МГц	B	E	C
FFp	BCV27	PHIL	PNP	VCB0=40B;IC=300MA; PD=250мВт; h21>20000; fT=220МГц	B	E	C
FFs	BCV27	SIEM	NPN	VCB0=40B;IC=500MA; PD=360мВт; h21>10000; fT=170МГц	B	E	C
FGp	BCV47	PHIL	NPN	VCB0=80B;IC=500MA; PD=250мВт; h21>4000; fT=220МГц	B	E	C
FGs	BCV47	SIEM	NPN	VCB0=80B;IC=500MA; PD=360мВт; h21>4000; fT=170МГц	B	E	C
FHs	BFN24	SIEM	NPN	VCB0=250B;IC=200MA; PD=360мВт; h21>40; fT=70МГц	B	E	C
FJs	BFN26	SIEM	NPN	VCB0=300B;IC=200MA; PD=360мВт; h21>30; fT=70МГц	B	E	C
FKs	BFN25	SIEM	PNP	VCB0=-250B;IC=-200MA; PD=360мВт; h21>40; fT=100МГц	B	E	C
FLs	BFN27	SIEM	PNP	VCB0=-300B;IC=-200MA; PD=360мВт; h21>30; fT=100МГц	B	E	C
G0	HSMP-3890	HP	PIN	IF<1A; PD<250мВт; VBR>100B; RS<2.5Ом; CD<0.30пФ	A	nc	K
G1	BFS20	ZETEX	NPN	VCB0=30B;IC=25MA; PD=330мВт; h21=40...85; fT>450МГц	B	E	C
G1p	BFS20	PHIL	NPN	VCB0=30B;IC=25MA; PD=250мВт; h21>40; fT=450МГц	B	E	C
G2	HSMP-3892	HP	2xPIN	IF<1A; PD<250мВт; VBR>100B; RS<2.5Ом; CD<0.30пФ	A1	K2	K1A2
G3	HSMP-3893	HP	2xPIN	IF<1A; PD<250мВт; VBR>100B; RS<2.5Ом; CD<0.30пФ	K1	K2	A1 A2
G3	BAR63	SIEM	PIN	VR<50B; IF<100MA;VF(IF =100MA)<1.2B; IR<0.05мкА; CD<0.3пФ	A	nc	K
G4	HSMP-3894	HP	2xPIN	IF<1A; PD<250мВт; VBR>100B; RS<2.5Ом; CD<0.30пФ	A1	A2	K1K2
G4	BAR63	SIEM	PIN	VR<50B; IF<100MA;VF(IF =100MA)<1.2B; IR<0.05мкА; CD<0.3пФ	A1	K2	K1A2
G6	BAR63-06	SIEM	2xPIN	VR<50B; IF<100MA;VF(IF =100MA)<1.2B; IR<0.05мкА; CD<0.3пФ	K1	K2	A1 A2
G6A	BC817-16	TOSH	NPN	VCB0=50B;IC=800MA; PD=330мВт; h21=100...250; fT=150МГц	B	E	C
G6B	BC817-25	TOSH	NPN	VCB0=50B;IC=800MA; PD=330мВт; h21=160...400; fT=150МГц	B	E	C
GA	HSMP-4890	HP	PIN	IF<1A; PD<250мВт; VBR>100B; RS<2.5Ом; CD<0.375пФ; LT=1.0нГ	A	A	K
GEs	BFR35AP	SIEM	NPN	VCB0=20B;IC=30MA; PD=280мВт; h21=40...200; fT=5000МГц	B	E	C
GFs	BFR92P	SIEM	NPN	VCB0=20B;IC=30MA; PD=280мВт; h21=40...200; fT=5000МГц	B	E	C
GG	BFR93P	SIEM	NPN	VCB0=20B;IC=50MA; PD=280мВт; h21>30; fT=5000МГц	B	E	C
H1	BCW69	ALLEG	PNP	VCB0=-50B; ICB0<100нA; h21=120…260;VCE(sat)<0.3B	B	E	C
H1	BCW69	CDIL	PNP	VCB0=-50B;IC=-100MA; PD=250мВт; h21=120...260; fT>100МГц	B	E	C
H1	SST4416	SIL	nFET	VDS=30B; PD=350мВт; IDSS=5...15мА; gF=4.5мСм; RDS(on)=150Ом	D	S	G
H1	BCW69	ZETEX	PNP	VCB0=-50B;IC=-100MA; PD=330мВт; h21=120...260; fT>150МГц	B	E	C
H1O	KSC2755	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=70...140; fT>600МГц	B	E	C
H1p	BCW69	PHIL	PNP	VCB0=-50B;IC=-100MA; PD=250мВт; h21=120...260; fT>100МГц	B	E	C
H1R	KSC2755	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=40...80; fT>600МГц	B	E	C
H1Y	KSC2755	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=120...240; fT>600МГц	B	E	C
H2	BCW70	ALLEG	PNP	VCB0=-50B; ICB0<100нA; h21=215…500;VCE(sat)<0.3B	B	E	C
H2	BCW70	CDIL	PNP	VCB0=-50B;IC=-100MA; PD=250мВт; h21=215...500; fT>100МГц	B	E	C
H2	BCW70	ZETEX	PNP	VCB0=-50B;IC=-100MA; PD=330мВт; h21=215...500; fT>150МГц	B	E	C
H2O	KSC2756	SAMS	NPN	VCB0=20B;IC=30MA; PD=150мВт; h21=90...180; fT>850МГц	B	E	C
H2p	BCW70	PHIL	PNP	VCB0=-50B;IC=-100MA; PD=250мВт; h21=215...500; fT>100МГц	B	E	C
H2R	KSC2756	SAMS	NPN	VCB0=20B;IC=30MA; PD=150мВт; h21=60...120; fT>850МГц	B	E	C
H2Y	KSC2756	SAMS	NPN	VCB0=20B;IC=30MA; PD=150мВт; h21=120...240; fT>850МГц	B	E	C

SOT23, SOD23 (продолжение)

Код	Типономинал	Фирма	Функ ция	Особенности	Цоколевка
H3	BCW89	CDIL	PNP	VCB0=-80B;IC=-100MA; PD=250мВт; h21=120...260; fT>100МГц	B	E	C
H3	KDV153	KEC	BD	VR=20B; IR=10нА; C2V=15пФ; C10V=5пФ; RS<0.6Ом	A	nc	K
H3	BCW89	ZETEX	PNP	VCB0=-80B;IC=-100MA; PD=330мВт; h21=120...260; fT>150МГц	B	E	C
H31	BCW89R	PHIL	PNP	VCB0=-60B;IC=-100MA; PD=350мВт; h21=120...260; fT=150МГц	E	B	C
H3O	KSC2757	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=90...180; fT>1100МГц	B	E	C
H3p	BCW89	PHIL	PNP	VCB0=-80B;IC=-100MA; PD=250мВт; h21=120...260; fT>150МГц	B	E	C
H3R	KSC2757R	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=60...120; fT>1100МГц	B	E	C
H3Y	KSC2757Y	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=120...240; fT>1100МГц	B	E	C
H4	BCW69R	PHIL	PNP	VCB0=-45B;IC=-100MA; PD=350мВт; h21=120...260; fT=100МГц	E	B	C
H4	SST5484	SIL	nFET	VDS=25B; PD=350мВт; IDSS=1...5мА; gF=2мСм	D	S	G
H4	BCW69R	ZETEX	PNP	VCB0=-50B;IC=-100MA; PD=330мВт; h21=120...260; fT>150МГц	B	E	C
H4Z	KSC2758	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=60...240; fT>1000МГц	B	E	C
H5	BCW70R	PHIL	PNP	VCB0=-45B;IC=-100MA; PD=350мВт; h21=215...500; fT>100МГц	E	B	C
H5	SST5485	SIL	nFET	VDS=25B; PD=350мВт; IDSS=4...10мА; gF=3.5мСм	D	S	G
H5	BCW70R	ZETEX	PNP	VCB0=-50B;IC=-100MA; PD=330мВт; h21=215...500; fT>150МГц	B	E	C
H5O	KSC2223	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=60...120; fT>600МГц	B	E	C
H5R	KSC2223	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=40...80; fT>600МГц	B	E	C
H5Y	KSC2223	SAMS	NPN	VCB0=30B;IC=20MA; PD=150мВт; h21=90...180; fT>600МГц	B	E	C
H6	SST5486	SIL	nFET	VDS=25B; PD=350мВт; IDSS=8...20мА; gF=4мСм	D	S	G
H6	BCW89R	ZETEX	PNP	VCB0=-80B;IC=-100MA; PD=330мВт; h21=120...260; fT>150МГц	B	E	C
H6O	KSC2759	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=60...120; fT>2000МГц	B	E	C
H6R	KSC2759	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=40...80; fT>2000МГц	B	E	C
H6Y	KSC2759	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=90...180; fT>2000МГц	B	E	C
H71	BCF70R	PHIL	PNP	VCB0=-45B;IC=-100MA; PD=350мВт; h21=215...500; fT>100МГц	E	B	C
H7p	BCF70	PHIL	PNP	VCB0=-50B;IC=-100MA; PD=250мВт; h21=215...500; fT>100МГц	B	E	C
H8Z	KSC2734	SAMS	NPN	VCB0=20B;IC=50MA; PD=150мВт; h21=20...200; fT>3500МГц	B	E	C
H9Z	KSC3120	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=40...200; fT>2400МГц	B	E	C
HAO	KSC3123	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=90...180; fT>1400МГц	B	E	C
HAR	KSC3123	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=60...120; fT>1400МГц	B	E	C
HAY	KSC3123	SAMS	NPN	VCB0=30B;IC=50MA; PD=150мВт; h21=120...240; fT>1400МГц	B	E	C
HBs	BFN22	SIEM	NPN	VCB0=25B;IC=50MA; PD=360мВт; h21>50; fT=100МГц	B	E	C
HCs	BFN23	SIEM	PNP	VCB0=-25B;IC=-50MA; PD=360мВт; h21>50; fT=100МГц	B	E	C
IO	KTA1298	KEC	PNP	VCB0=-35B;IC=-800MA; PD=200мВт; h21=100...200; fT>120МГц	B	E	C
IY	KTA1298	KEC	PNP	VCB0=-35B;IC=-800MA; PD=200мВт; h21=160...320; fT>120МГц	B	E	C
J0	SST110	SIL	nFET	VDS=25B; PD=350мВт; IDSS>10мА; gF=17мСм; RDS(on)=18Jv	D	S	G
J1A	ZC830A	ZETEX	BD	VR<25B; C2V=10±10%пФ; C2V/C20V=4.5...6; Q>300	A	nc	K
J1B	ZC830B	ZETEX	BD	VR<25B; C2V=10±5%пФ; C2V/C20V=4.5...6; Q>300	A	nc	K
J1O	KSA1298	SAMS	PNP	VCB0=-30B;IC=-800MA; PD=200мВт; h21=100...200; fT>120МГц	B	E	C
J1S	ZC830	ZETEX	BD	VR<25B; C2V=10±20%пФ; C2V/C20V=4.5...6; Q>300	A	nc	K
J1Y	KSA1298	SAMS	PNP	VCB0=-30B;IC=-800MA; PD=200мВт; h21=160...320; fT>120МГц	B	E	C
J2A	ZC833A	ZETEX	BD	VR<25B; C2V=33±10%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J2B	ZC833B	ZETEX	BD	VR<25B; C2V=33±5%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J2S	ZC833	ZETEX	BD	VR<25B; C2V=33±20%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J3A	ZC831A	ZETEX	BD	VR<25B; C2V=15±10%пФ; C2V/C20V=4.5...6; Q>300	A	nc	K

SOT23, SOD23 (продолжение)

Код	Типономинал	Фирма	Функ ция	Особенности	Цоколевка
J3B	ZC831B	ZETEX	BD	VR<25B; C2V=15±5%пФ; C2V/C20V=4.5...6; Q>300	A	nc	K
J3S	ZC831	ZETEX	BD	VR<25B; C2V=15±20%пФ; C2V/C20V=4.5...6; Q>300	A	nc	K
J4A	ZC832A	ZETEX	BD	VR<25B; C2V=22±10%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J4B	ZC832B	ZETEX	BD	VR<25B; C2V=22±5%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J4S	ZC832	ZETEX	BD	VR<25B; C2V=22±20%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J5A	ZC834A	ZETEX	BD	VR<25B; C2V=47±10%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J5B	ZC834B	ZETEX	BD	VR<25B; C2V=47±5%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J5S	ZC834	ZETEX	BD	VR<25B; C2V=47±20%пФ; C2V/C20V=5...6.5; Q>200	A	nc	K
J6A	ZC835A	ZETEX	BD	VR<25B; C2V=68±10%пФ; C2V/C20V=5...6.5; Q>100	A	nc	K
J6B	ZC835B	ZETEX	BD	VR<25B; C2V=68±5%пФ; C2V/C20V=5...6.5; Q>100	A	nc	K
J6S	ZC835	ZETEX	BD	VR<25B; C2V=68±20%пФ; C2V/C20V=5...6.5; Q>100	A	nc	K
J7A	ZC836A	ZETEX	BD	VR<25B; C2V=100±10%пФ; C2V/C20V=5...6.5; Q>100	A	nc	K
J7B	ZC836B	ZETEX	BD	VR<25B; C2V=100±5%пФ; C2V/C20V=5...6.5; Q>100	A	nc	K
J7S	ZC836	ZETEX	BD	VR<25B; C2V=100±20%пФ; C2V/C20V=5...6.5; Q>100	A	nc	K
J8	BCX71JR	ZETEX	PNP	VCB0=-45B;IC=-200MA; PD=330мВт; h21=250...460; fT>180МГц	B	E	C
J9	SST109	SIL	nFET	VDS=25B; PD=350мВт; IDSS>40мА; gF=17мСм;RDS(on)=12OM	D	S	G
JA	BAV74	ALLEG	2xD	IF<70мA; VBR>50B; VF(IF =100MA)<1.0B; IR<100нА; tRR<4.0нc; Co<2.0пФ	A1	A2	K1K2
JA	BAV74	ZETEX	2xFD	VR<50B; IF<150MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2пФ; tRR<4нc	A1	A2	K1A2
JAp	BAV74	PHIL	2xFD	VR<50B; IF<215MA;VF(IF =100MA)<1.0B; CD<2.0пФ; tRR<4нc	A1	A2	K1K2
JAs	BAV74	SIEM	2xDI	VR<50B; IF<200MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2.0пФ; tRR<4нc	A1	A2	K1A2
JB	BAR74	ZETEX	DI	VR<50B; IF<150MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2.0пФ; tRR<4нc	A	nc	K
JBs	BAR74	SIEM	DI	VR<50B; IF<250MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2пФ; tRR<4нc	A	nc	K
JC	BAL74	ZETEX	DI	VR<50B; IF<150MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2пФ; tRR<4нc	nc	A	K
JCp	BAL74	PHIL	FD	VR<50B; IF<215MA;VF(IF =50MA)<1.0B; CD<2пФ; tRR<4нc	nc	A	K
JCs	BAL74	SIEM	DI	VR<50B; IF<250MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2пФ; tRR<4нc	nc	A	K
JD	BAW56	VISH	2xDI	VR<70B; IF<300MA;VF(IF =150MA)<1.25B; IR<5.0мкА; CD<4.0пФ; tRR<6нc	K1	K2	A1 A2
JE	BAV99	VISH	2xDI	VR<70B; IF<300MA;VF(IF =150MA)<1.25B; IR<5.0мкА; CD<4.0пФ; tRR<6нc	A1	K2	K1A2
JF	BAL99	GS	SHD	VR=100B; IF=300MA;PD=350MBT; tRR<6нc	nc	K	A
JF	BAL99	VISH	DI	VR<70B; IF<250MA;VF(IF =50MA)<1.0B; IR<2.5мкА; CD<1.5пФ; tRR<6нc	nc	K	A
JFp	BAL99	PHIL	FD	VR<70B; IF<250MA;VF(IF =50MA)<1.0B; CD<1.5пФ; tRR<6нc	nc	K	A
JFs	BAL99	SIEM	DI	VR<70B; IF<250MA;VF(IF =50MA)<1.0B; IR<2.5мкА; CD<1.5пФ; tRR<6нc	nc	K	A
JGs	BAR99	SIEM	DI	VR<70B; IF<250MA;VF(IF =50MA)<1.0B; IR<2.5мкА; CD<1.5пФ; tRR<6нc	K	nc	A
JJ	BAV70	VISH	2xDI	VR<70B; IF<300MA;VF(IF =150MA)<1.25B; IR<5.0мкА; CD<4.0пФ; tRR<6нc	A1	A2	K1A2
JPp	BAS19	PHIL	FD	VR<100B; IF<200MA;VF(IF =100MA)<1.0B; CD<5пФ; tRR<50нc	A	nc	K
JPs	BAS19	SIEM	DI	VR<100B; IF<250MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<5.0пФ; tRR<50нc	A	nc	K
JRp	BAS20	PHIL	FD	VR<150B; IF<200MA;VF(IF =100MA)<1.0B; CD<5пФ; tRR<50нc	A	nc	K
JRs	BAS20	SIEM	DI	VR<150B; IF<250MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<5.0пФ; tRR<50нc	A	nc	K
JSp	BAS21	PHIL	FD	VR<200B; IF<200MA;VF(IF =100MA)<1.0B; CD<5пФ; tRR<50нc	A	nc	K
JSs	BAS21	SIEM	DI	VR<200B; IF<250MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<5.0пФ; tRR<50нc	A	nc	K
JVp	BAS116	PHIL	DL	VR<75B; IF<215MA;VF(IF =10MA)<1.0B; IR(VR=75B)<5HА; CD<2пФ; tRR<3000нc	A	nc	K

Дата добавления: 2015-06-27