SOT-343 15 страница

SOT23, SOD23 (продолжение)

Код	Типономинал	Фирма	Функ ция	Особенности	Цоколевка
R58	KSR2108	SAMS	D-PNP	VCB0=-50B;IC=-100MA; PD=200мВт; h21>56; fT>250МГц	B	E	C
R59	KSR2109	SAMS	PNP	VCB0=-40B;IC=-100MA; PD=200мВт; h21=100...600; fT>250МГц	B	E	C
R60	KSR2110	SAMS	PNP	VCB0=-40B;IC=-100MA; PD=200мВт; h21=100...300; fT>250МГц	B	E	C
R61	KSR2111	SAMS	PNP	VCB0=-40B;IC=-100MA; PD=200мВт; h21=100...300; fT>250МГц	B	E	C
R62	KSR2112	SAMS	PNP	VCB0=-40B;IC=-100MA; PD=200мВт; h21=100...300; fT>250МГц	B	E	C
R63	KSR2113	SAMS	PNP	VCB0=-50B;IC=-100MA; PD=300мВт; h21>68; fT>250МГц	B	E	C
R64	KSR2114	SAMS	PNP	VCB0=-50B;IC=-100MA; PD=300мВт; h21>68; fT>250МГц	B	E	C
R65	SSTA65	ROHM	PNP	VCB0=-30B;IC=-300MA; h21>50000; fT>100МГц	B	E	C
R7s	BFR106	SIEM	NPN	VCB0=20B;IC=100MA; PD=700мВт; h21=25...250; fT=5000МГц	B	E	C
R97	SSTTI97	ROHM	NPN	VCB0=60B;IC=200MA; h21=250...700	B	E	C
RA1	BAW56	VISH	2xSD	VR=100B; IF=300MA; PD=350мВт; tRR<6нc	K1	K2	A1A2
RA4	BAV70	VISH	2xSD	VR=100B; IF=300MA; PD=350мВт; tRR<6нc	A1	A2	K1K2
RA6	BAS16	VISH	SHD	VR=100B; IF=500MA; PD=350мВт; tRR<4нc	A	nc	K
RA7	BAV99	VISH	2xSD	VR=100B; IF=300MA; PD=350мВт; tRR<6нc	A1	K2	K1A2
RAB	MMBD4448	VISH	SHD	VR=100B; IF=500MA; PD=350мВт; tRR<4нc	A	nc	K
RAF	SSTA29	ROHM	NPN	VCB0=100B;IC=500MA; h21>10000; fT>125МГц	B	E	C
Ras	BFQ81	SIEM	NPN	VCB0=25B;IC=30MA; PD=280мВт; h21=50...200; fT=5800МГц	B	E	C
RAT	SSTA28	ROHM	NPN	VCB0=80B;IC=500MA; h21>10000; fT>125МГц	B	E	C
RAV	BAS16	VISH	SHD	VR=100B; IF=500MA; PD=350мВт; tRR<4нc	A	nc	K
RBA	BAV99	VISH	2xSD	VR=100B; IF=300MA; PD=350мВт; tRR<6нc	A1	K2	K1A2
RBQ	SST7208	ROHM	NPN	VCB0=60B;IC=100MA; h21>100; fT>180МГц	B	E	C
RBR	SST6838	ROHM	NPN	VCB0=50B;IC=200MA; h21>100; fT>50МГц	B	E	C
RBs	BF771	SIEM	NPN	VCB0=20B;IC=80MA; PD=580мВт; h21=50...200; fT=8000МГц	B	E	C
RCs	BFR193	SIEM	NPN	VCB0=20B;IC=80MA; PD=580мВт; h21=50...200; fT=8000МГц	B	E	C
RDs	BFR180	SIEM	NPN	VCB0=10B;IC=4MA; PD=30мВт; h21=30...200; fT=6200МГц	B	E	C
RFQ	SST6839	ROHM	PNP	VCB0=-50B;IC=-200MA; h21>100; fT>50МГц	B	E	C
RFs	BFR181	SIEM	NPN	VCB0=20B;IC=20MA; PD=175мВт; h21=50...200; fT=8000МГц	B	E	C
RGs	BFR182	SIEM	NPN	VCB0=20B;IC=35MA; PD=250мВт; h21=50...200; fT=8000МГц	B	E	C
RHs	BFR183	SIEM	NPN	VCB0=20B;IC=65MA; PD=450мВт; h21=50...200; fT=8000МГц	B	E	C
RKs	BFR194	SIEM	PNP	VCB0=-20B;IC=-100MA; PD=700мВт; h21=20...150; fT=5000МГц	B	E	C
RSR	SST5210	ROHM	NPN	VCB0=50B;IC=200MA; h21=200...600; fT>30МГц	B	E	C
RVZ	MMST4126	ROHM	PNP	VCB0=-25B;IC=-200MA; h21=120...360; fT>250МГц	B	E	C
RX7	SST6426	ROHM	NPN	VCB0=40B;IC=500MA; h21=300...300000	B	E	C
RZC	SST4124	ROHM	NPN	VCB0=30B;IC=200MA; h21=120...360; fT>300МГц	B	E	C
RZQ	MMST7157	ROHM	PNP	VCB0=-60B;IC=-200MA; h21>100	B	E	C
S0	HSMP-3880	HP	PIN	IF<1A; PD<250мВт; VBR>100B; RS<6.5Ом; CD<0.40пФ;	A	nc	K
S0	SST270	SIL	nFET	VDS=30B; PD=350мВт; gF=6MCM; IDSS=2...15mA	D	S	G
S1	BBY31	PHIL	BD	VR<30B; IF<20MA; IR<10нА; RS<1.2Ом; C1V=16.5пФ; C28V=1.6...2пФ	A	nc	K
S1	SST271	SIL	nFET	VDS=30B; PD=350мВт; IDSS=6...50mA gF=0.5MCM;	D	S	G
S1	BBY31	ZETEX	BD	VR<28B; C25V=1.8...2пФ; C3V/C25V>5	A	nc	K
S12	BBY39	PHIL	2xBD	VR<30B; IF<20MA; C1V=16.5пФ; C28V=1.6...2пФ	A1	A2	K1K2
S13	BBY42	PHIL	BD	VR<30B; IF<20MA; IR<10нА; RS<1Ом; C1V>31пФ; C28V=2.4...3пФ	A	nc	K
S14	BB901	PHIL	BD	VR<28B; IF<20MA; IR<10нА; RS<3Ом; C28V<1.055пФ; C0.5V/C28V>12	A	nc	K
S16	ZHCS1006	ZETEX	SHD	VR<60B; IF<0.9MA;VF(IF =1A)<0.6B; IR<100мкА; CD<17пФ; tRR<12нc	A	nc	K
s1A	SMBT3904	SIEM	NPN	VCB0=60B;IC=200MA; PD=330мВт; h21=100...300; fT>300МГц	B	E	C
s1B	PXTA93	SIEM	PNP	VCB0=-200B;IC=-500MA; PD=1000мВт; h21>40; fT>50МГц	B	E	C
s1B	SMBT2222	SIEM	NPN	VCB0=60B;IC=600MA; PD=330мВт; h21=100...300; fT>250МГц	B	E	C
s1C	SMBTA20	SIEM	NPN	VCB0=40B;IC=100MA; PD=330мВт; h21=40...400; fT>125МГц	B	E	C
s1D	SMBTA42	SIEM	NPN	VCB0=300B;IC=500MA; PD=360мВт; h21>40; fT>50МГц	B	E	C
s1E	SMBTA43	SIEM	NPN	VCB0=200B;IC=500MA; PD=360мВт; h21>40; fT>50МГц	B	E	C
s1G	SMBTA06	SIEM	NPN	=VCB0=80B;IC=500MA; PD=330мВт; h21>100; fT>100МГц	B	E	C

SOT23, SOD23 (продолжение)

Код	Типономинал	Фирма	Функ ция	Особенности	Цоколевка
s1H	SMBTA05	SIEM	NPN	VCB0=60B;IC=500MA; PD=330мВт; h21>100; fT=100МГц	B	E	C
s1K	SMBT6428	SIEM	NPN	VCB0=60B;IC=200MA; PD=330мВт; h21=250...650; fT=200МГц	B	E	C
s1L	SMBT6429	SIEM	NPN	VCB0=55B;IC=200MA; PD=330мВт; h21=500...1250; fT=200МГц	B	E	C
s1M	SMBTA13	SIEM	NPN	VCB0=30B;IC=300MA; PD=330мВт; h21>5000; fT>125МГц	B	E	C
s1N	SMBTA14	SIEM	NPN	VCB0=30B;IC=300MA; PD=330мВт; h21>10000; fT>125МГц	B	E	C
s1P	SMBT2222A	SIEM	NPN	VCB0=75B;IC=600MA; PD=330мВт; h21=100...300; fT>300МГц	B	E	C
s1V	SMBT6427	SIEM	NPN	VCB0=40B;IC=500MA; PD=360мВт; h21=20000...200000; fT>130МГц	B	E	C
S2	BBY40	PHIL	BD	VR<30B; IF<20MA; IR<10нА; RS<0.7Ом; C3V=26...32пФ; C25V=4.3...6пФ	A	nc	K
S2	BBY40	ZETEX	BD	VR<28B; C3V=26...32пФ; C3V/C25V=5...6.5	A	nc	K
S2	BBQ31	ZETEX	NPN	VCB0=30B;IC=100MA; PD=330мВт; h21>20; fT>600МГц	B	E	C
s2A	SMBT3906	SIEM	PNP	VCB0=-40B;IC=-200MA; PD=330мВт; h21=100...300; fT>250МГц	B	E	C
s2B	SMBT2907	SIEM	PNP	VCB0=-40B;IC=-600MA; PD=330мВт; h21=100...300; fT>200МГц	B	E	C
s2C	SMBTA70	SIEM	PNP	VCB0=-40B;IC=-100MA; PD=330мВт; h21=40...400; fT>150МГц	B	E	C
s2D	SMBTA92	SIEM	PNP	VCB0=-300B;IC=-500MA; PD=360мВт; h21>25; fT>50МГц	B	E	C
s2E	SMBTA93	SIEM	PNP	VCB0=-200B;IC=-500MA; PD=360мВт; h21>25; fT>50МГц	B	E	C
s2F	SMBT2907A	SIEM	PNP	VCB0=-60B;IC=-600MA; PD=330мВт; h21=100...300; fT>200МГц	B	E	C
s2G	SMBTA56	SIEM	PNP	VCB0=-80B;IC=-500MA; PD=330мВт; h21>100; fT=100МГц	B	E	C
s2H	SMBTA55	SIEM	PNP	VCB0=-60B;IC=-500MA; PD=330мВт; h21>100; fT=100МГц	B	E	C
s2P	SMBT5086	SIEM	PNP	VCB0=-50B;IC=-50MA; PD=330мВт; h21=150...500; fT>40МГц	B	E	C
s2V	SMBTA64	SIEM	PNP	VCB0=-30B;IC=-500MA; PD=360мВт; h21>10000; fT>125МГц	B	E	C
s2Q	SMBT5087	SIEM	PNP	VCB0=-50B;IC=-50MA; PD=330мВт; h21=250...800; fT>40МГц	B	E	C
s2U	SMBTA63	SIEM	PNP	VCB0=-30B;IC=-500MA; PD=360мВт; h21>5000; fT>125МГц	B	E	C
S3	BBY51	SIEM	2xBD	VR<7B; IF<20MA; IR<0.01мкА; C1V=4.5...6.1пФ; C1V/C4V=1.55...2.2	A1	A2	K1K2
S3	BBQ31R	ZETEX	NPN	VCB0=30B;IC=100MA; PD=330мВт; h21>20; fT>600МГц	B	E	C
S4	SST174	SIL	nFET	VDS=-30B; PD=350мВт; IDSS=-20...135мA; gF=4.5MCM;	D	S	G
S4	BBQ31A	ZETEX	NPN	VCB0=30B;IC=100MA; PD=330мВт; h21>100; fT>600МГц	B	E	C
S5	SST175	SIL	nFET	VDS=-30B; PD=350мВт; IDSS=7...70мA; gF=4.5MCM;	D	S	G
S5	BBQ31AR	ZETEX	NPN	VCB0=30B;IC=100MA; PD=330мВт; h21>100; fT>600МГц	B	E	C
S50	BS850	GS	pFET	VDSS=-60B; ID=-250мA; PD=310мВт; VGS<20B	G	S	D
s56	ZHCS506	ZETEX	SHD	VR<60B; IF<0.5MA;VF(IF =0.5A)<0.63B; IR<40мкА; CD<20пФ; tRR<10нc	A	nc	K
s5A	SMBD6050	SIEM	DI	VR<70B; IF<250MA;VF(IF =100MA)<1.1B; IR<0.1мкА; CD<2.5пФ; tRR<10нc	A	nc	K
s5B	SMBD6100	SIEM	2xDI	VR<70B; IF<250MA;VF(IF =100MA)<1.1B; IR<0.1мкА; CD<2.5пФ; tRR<15нc	A1	A2	K1K2
s5C	SMBD7000	SIEM	2xDI	VR<100B; IF<200MA;VF(IF =100MA)<1.1B; IR<0.5мкА; CD<2.0пФ; tRR<15нc	A1	K2	K1A2
s5D	SMBD914	SIEM	DI	VR<70B; IF<250MA;VF(IF =100MA)<1.0B; IR<0.025мкА; CD<2.0пФ; tRR<4нc	A	nc	K
S5s	BBY52	SIEM	2xBD	VR<7B; IF<20MA; IR<0.01мкА; C1V=1.1...2.5пФ; C1V/C4V=1.1...2.1	A1	A2	K1K2
S6	SST176	SIL	pFET	VDS=-30B; PD=350мВт; IDSS=2...350мA; gF=4.5MCM;	D	S	G
S7	SST177	SIL	pFET	VDS=-30B; PD=350мВт; IDSS=-1.6...20мA; gF=4.5MCM;	D	S	G
S70	BS870	GS	nFET	VDSS=60B; ID=250мA; PD=310мВт; VGS<20B	G	S	D
S72	2N7002	VISH	nFET	VDSS=60B; ID=115мA; PD=200мВт; VGS<2.5B; CICC=60пФ	G	S	D
S76	ZHCS756	ZETEX	SHD	VR<60B; IF<0.75A;VF(IF =0.75A)<0.61B; IR<100мкА; CD<17пФ; tRR<12нc	A	nc	K
S7s	BBY53	SIEM	2xBD	VR<6B; IF<20MA; IR<0.01мкА; C1V=4.8...5.8пФ; C2V/C3V=1.8...2.8	A1	A2	K1K2
S8	BAT15-04	SIEM	SHD	VR<4B; IF<110MA;VF(IF =10MA)<0.48B; CD<0.35пФ	A	nc	K
SA	BSS123	ZETEX	nMOS	VDS=100B; ID=170MA; PD=330мВт; gF=90MCM; RDS(ON)=14OM	G	S	D
sA2	SMBD2836	SIEM	2xDI	VR<50B; IF<200MA;VF(IF =100MA)<1.2B; IR<0.1мкА; CD<4пФ; tRR<6нc	K1	K2	A1A2
sA3	SMBD2835	SIEM	2xDI	VR<30B; IF<200MA;VF(IF =100MA)<1.2B; IR<0.1мкА; CD<4пФ; tRR<6нc	K1	K2	A1A2
sA4	SMBD2838	SIEM	2xDI	VR<50B; IF<200MA;VF(IF =100MA)<1.2B; IR<0.1мкА; CD<4пФ; tRR<6нc	A1	A2	K1K2

SOT23, SOD23 (продолжение)

Код	Типономинал	Фирма	Функ ция	Особенности	Цоколевка
sA5	SMBD2837	SIEM	2xDI	VR<30B; IF<200MA;VF(IF =100MA)<1.2B; IR<0.1мкА; CD<4пФ; tRR<6нc	A1	A2	K1K2
SAs	BSS123	SIEM	nMOS	VDS=100B; ID=170MA; PD=360мВт; gF=170MCM; RDS(ON)=6OM	G	S	D
SBs	BSS145	SIEM	nMOS	VDS=65B; ID=220MA; PD=360мВт; gF=120MCM; RDS(ON)=3.5OM	G	S	D
sC3	SMBD2837	SIEM	2xDI	VCB0=-25B;IC=200MA; PD=330мВт; h21=120...360; fT>300МГц	B	E	C
SDs	BSS284	SIEM	pMOS	VDS=-50B; ID=-130MA; PD=360мВт; gF=50MCM; RDS(ON)=10OM	G	S	D
SF0	BB804	PHIL	2xBD	VR<18B; IF<50MA; IR<20нА; RS<0.2 OM; C2V=42...43.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF0	BB804F0	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; RS<0.2 OM; C2V=42...43.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF1	BB804	PHIL	2xBD	VR<18B; IF<50MA; IR<20нА; C2V=43...44.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF1	BB804F1	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=43...44.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF2	BB804	PHIL	2xBD	VR<18B; IF<50MA; IR<20нА; RS<0.2 OM; C2V=44...45.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF2	BB804F2	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=44...45.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF3	BB804	PHIL	2xBD	VR<18B; IF<50MA; IR<20нА; RS<0.2OM; C2V=45...46.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF3	BB804F3	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=45...46.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SF4	BB804F4	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=46...47.5пФ; C2V/C8V>1.65	A1	A2	K1K2
SH1	BB814H1	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=43...45пФ; C2V/C8V=2.05...2.25	A1	A2	K1K2
SH2	BB814H2	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=44.5...46.5пФ; C2V/C8V=2.05...2.25	A1	A2	K1K2
SMs	BB914	SIEM	2xBD	VR<18B; IF<50MA; IR<0.02мкА; C2V=42.5...45пФ; C2V/C8V=2.28...2.42	A1	A2	K1K2
SP	BSS84	ZETEX	pMOS	VDS=-50B; ID=130MA; PD=360мВт; gF=50MCM; RDS(ON)=10OM	G	S	D
SPs	BSS84	SIEM	pMOS	-VDS=-50B; ID=-130MA; PD=360мВт; gF>50MCM; RDS(ON)<10OM	G	S	D
SRs	BSS131	SIEM	nMOS	1VDS=240B; ID=100MA; PD=360мВт; gF=140MCM; RDS(ON)=6OM	G	S	D
SS	BSS138	ZETEX	nMOS	VDS=50B; ID=200MA; PD=360мВт; gF=120MCM; RDS(ON)=6OM	G	S	D
sSF	SP0610T	SIEM	pMOS	VDS=-60B; ID=-130MA; PD=360мВт; gF>80MCM; RDS(ON)=10OM	G	S	D
sSH	BSS119	SIEM	nMOS	VDS=100B; ID=170MA; PD=360мВт; gF>100MCM; RDS(ON)=6OM	G	S	D
sSJ	BSS7728	SIEM	nMOS	VDS=60B; ID=150MA; PD=360мВт; gF=80MCM; RDS(ON)=7.5OM	G	S	D
SSs	BSS138	SIEM	nMOS	VDS=50B; ID=220MA; PD=360мВт; gF>1200MCM; RDS(ON)=3.5OM	G	S	D
STs	BSS139	SIEM	nMOS	VDS=250B; ID=40MA; PD=360мВт; gF>50MCM; RDS(ON)<100OM	G	S	D
sZC	SMBT4124	SIEM	NPN	VCB0=30B;IC=200MA; PD=330мВт; h21=120...360; fT>300МГц	B	E	C
T0	HSMS-2860	HP	SHD	VBR>5B; VF(IF =30MA)<0.6B; CT<0.30пФ; RD=10OM	A	nc	K
T0	TP610T	SIL	pMOS	VDS=-60B; ID=120MA; PD=360мВт; gF=60MCM; RDS(ON)<10OM	G	S	D
T1	BCX17	ALLEG	PNP	VCB0=-50B; ICB0<100нA; h21=100…600; VCE(sat)<0.62B	B	E	C
T1	BCX17	CDIL	PNP	VCB0=-45B;IC=-500MA; PD=250мВт; h21=100...600; fT>100МГц	B	E	C
T1	HSMS-2862	HP	2xSHD	VBR>5B; VF(IF =30MA)<0.6B; CT<0.30пФ; RD=10OM	A1	K2	K1A2
T1	BCX17	ZETEX	PNP	VCB0=-50B;IC=-500MA; PD=330мВт; h21=100...600; fT>100МГц	B	E	C
T1p	BCX17	PHIL	PNP	VCB0=-45B;IC=-500MA; PD=250мВт; h21=100...600; fT>100МГц	B	E	C
T2	BCX18	ALLEG	PNP	VCB0=-30B; ICB0<100нA; h21=100…600; VCE(sat)<0.62B	B	E	C
T2	BCX18	CDIL	PNP	VCB0=-25B;IC=-500MA; PD=250мВт; h21=100...600; fT>100МГц	B	E	C
T2	TN2460T	SIL	nMOS	VDS=240B; ID=51MA; PD=360мВт; gF=70MCM; RDS(ON)=11OM	G	S	D

Дата добавления: 2015-06-27